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| product specification www.jm nic.com silicon npn power transistors 2SC2365 description ? with to-3 package ? high breakdown voltage applications ? for use in switch-mode ctv supply systems pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cm collector current-peak 8 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
product specification www.jmnic.com 2 silicon npn power transistors 2SC2365 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a; i b =1.25a 3.0 v v besat base-emitter saturation voltage i c =4a; i b =1.25a 1.6 v i cbo collector cut-off current v cb =600v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =3a ; v ce =4v 12 f t transition frequency i c =0.5a ; v ce =10v 10 mhz product specification www.jmnic.com 3 silicon npn power transistors 2SC2365 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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